Process for producing boron nitride
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United States of America Patent
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-
Dec 31, 1985
Grant Date -
N/A
app pub date -
Aug 13, 1984
filing date -
Aug 25, 1983
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A process for producing boron nitride is described, comprising reacting at least one boron compound selected from the group consisting of boric acid and metal salt thereof and at least one nitrogen-containing compound which is capable of bonding to the boron compound to form a compound in which a boron atom and a nitrogen atom co-exist, and then heating the compound thus formed at a temperature of at least 600.degree. C. in an atmosphere of inert or reducing gas. This process can produce high purity boron nitride at relatively low temperatures in high yields. Moreover, boron nitride can be obtained in desired crystal forms including a flake-like crystal form.
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