Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing deposition of amorphous semiconductor layer
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United States of America Patent
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Feb 11, 1986
Grant Date -
N/A
app pub date -
Mar 7, 1983
filing date -
Mar 7, 1983
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In fabricating a PROM cell, an electrical isolation mechanism (44 and 32) is formed in a semiconductive body to separate islands of an upper zone (36) of first type conductivity (N) in the body. A semiconductor impurity is introduced into one of the islands to produce a region (48) of opposite type conductivity (P) that forms a PN junction laterally bounded by the island's side boundaries. A highly resistive amorphous semiconductive layer (58) which is irreversibly switchable to a low resistive state is deposited above the region in such a manner as to be electrically coupled to the region. A path of first type conductivity extending from the PN junction through another of the islands to its upper surface is created in the body to complete the basic cell.
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