Low temperature method of deposition silicon dioxide
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United States of America Patent
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Feb 25, 1986
Grant Date -
N/A
app pub date -
Dec 28, 1984
filing date -
Dec 28, 1984
priority date (Note) -
Expired
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Abstract
It has been found that by subjecting a source of silicon and an oxygen containing gaseous precursor to a glow discharge in the presence of an excess of hydrogen, a silicon dioxide film of substantially increased density can be deposited onto a substrate. Alternatively, where it is important to have an enhanced silicon to silicon dioxide interface, the process may comprise a first step of growing a silicon dioxide film between 50 and 1000.ANG. thick by low temperature plasma oxidation and a second step of depositing by glow discharge an additional thickness of silicon dioxide layer, which is produced from a plasma of a source of silicon and an oxygen-containing gaseous precursor, in an excess of hydrogen.
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