Titanium disulfide thin film and process for fabricating the same

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United States of America Patent

PATENT NO 4572873
SERIAL NO

06702661

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Abstract

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The present invention relates to a titanium disulfide film fabricated on a substrate, where crystallites of titanium disulfide is oriented at an angle of their c-axis to the substrate surface of not more than 45.degree., and to a process for fabricating the film, where the film is prepared by chemical vapor deposition from TiCl.sub.4 and H.sub.2 S as source gases under an inner pressure of reaction tube of 30 kPa or less.

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Patent Owner(s)

Patent OwnerAddress
HITACHI LTD6-6 MARUNOUCHI 1-CHOME CHIYODA-KU TOKYO 1008280 ?1008280

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kanehori, Keiichi Sayama, JP 11 262
Kudo, Tetsuichi Tokyo, JP 19 318
Miyauchi, Katsuki Hino, JP 14 390

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