Importance

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Abstract

A semiconductor transducer has a strain sensitive region, at least one strain gage formed integrally with a major surface of the strain sensitive region corresponding to a major surface of a monocrystalline silicon substrate, a bridge circuit including the strain gage, an operational amplifier, an input terminal of which is connected to an output terminal of the bridge circuit, and parallel-connected resistors which are integrally formed on the major surface of the monocrystalline silicon substrate and each of which has two ends connected to the input terminal and an output terminal of the operational amplifier, respectively, the strain sensitive region, the strain gage, the operational amplifier and the parallel-connected resistors being formed on the monocrystalline silicon substrate, wherein a difference between a temperature coefficient of resistance of the strain gage and a temperature coefficient of sensitivity thereof is set to be substantially the same as a temperature coefficient of resistance of the parallel-connected resistors. Resistors connected in series with the input terminals of the operational amplifier can thus be eliminated. The resistance of the parallel-connected resistors can be decreased, thereby providing a compact, highly integrated arrangement. In addition, a temperature compensator need not be used to compensate for the sensitivity.

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First Claim