Low temperature growth of silicon dioxide on silicon
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United States of America Patent
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Mar 18, 1986
Grant Date -
N/A
app pub date -
Dec 28, 1984
filing date -
Dec 28, 1984
priority date (Note) -
Expired
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Abstract
A low temperature, high power method of plasma oxidation for silicon dioxide films is disclosed. The method includes the use of magnetron electrodes which effectively increase the power density of the plasma. The effective power density should be between 1 and 15 Watts/cm.sup.2 and preferably about 6 Watts/cm.sup.2. By maintaining the substrate temperature below about 300.degree. C., and preferably at about 130.degree. C., it has been found that a high quality silicon dioxide film up to about 1000.ANG. in thickness is grown. The films produced by this process have an excellent interface with the silicon, good electrical properties and good density.
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