Thin film semiconductor device
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United States of America Patent
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Mar 25, 1986
Grant Date -
N/A
app pub date -
Nov 23, 1983
filing date -
Nov 25, 1982
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A thin film semiconductor device and a method for manufacturing such a device containing a thin film semiconductor layer in which there is no misalignment between a semiconductor layer containing a microcrystalline phase and an adjacent layer having no such phase. A junction region is interposed between the two amorphous semiconductor layers having a microcrystalline phase content which varies gradually from the content of the amorphous semiconductor layer having no microcrystalline phase to that of the layer having a microcrystalline phase. The junction region may be formed by the use of a glow discharge decomposition technique wherein the discharge power is gradually varied.
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