Method for the manufacture of bipolar transistor structures with self-adjusting emitter and base regions for extreme high frequency circuits
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 8, 1986
Grant Date -
N/A
app pub date -
Jun 1, 1984
filing date -
Aug 26, 1983
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for the manufacture of bipolar transistor structures with self-adjusted emitter and base regions wherein the emitter and base regions are generated by an out-diffusion from doped polysilicon layers. Dry etching processes which produce vertical etching profiles are employed for structuring the SiO.sub.2 and polysilicon layers. The employment of additional oxidation processes for broadening the lateral edge insulation (see arrow 9) during the manufacture of the bipolar transistor structures enables self-adjusted emitter-base structures with high reproducibility in addition to advantages with respect to the electrical parameters. The method is employed for the manufacture of VLSI circuits in bipolar technology.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully