Process for forming multi-layer interconnections
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United States of America Patent
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Apr 15, 1986
Grant Date -
N/A
app pub date -
Nov 28, 1984
filing date -
Nov 28, 1983
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
First conductive members are buried in first holes formed in a first insulating film to connect the second interconnection layers, formed through first and second insulating films, to a semiconductor substrate. Second conductive members are buried in second holes formed to be positioned on the first holes of the second insulating film. Thus, the reliability of a semiconductor device of a multi-layer interconnection structure is improved, and the integration thereof is improved.
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