Electrically programmable read only memory
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 20, 1986
Grant Date -
N/A
app pub date -
Dec 21, 1982
filing date -
Dec 21, 1982
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A programmable read only memory (PROM) includes voltage programmable structures which are readily fabricated to provide predictable and selectable programming voltages. The resistor structure includes a body of semiconductor material having high electrical conductance and a surface contact region having a crystalline structure characterized by relatively high electrical resistance. The relatively high electrical resistance can be established by amorphotizing the surface region or by forming lattice defects in the crystalline structure such as by ion implantation. In programming the PROM, a sufficient voltage is applied across, or sufficient current is applied through, selected structures whereby the surface regions thereof are heated sufficiently to reduce the relatively high electrical resistance.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully