Method of producing single-crystal silicon film
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United States of America Patent
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Jul 8, 1986
Grant Date -
N/A
app pub date -
May 4, 1983
filing date -
May 7, 1982
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
On a semiconductor substrate surface, a plurality of polycrystalline or amorphous silicon films and a plurality of insulator films which are substantially transparent to an irradiating energy beam and each of which has an opening are formed so as to be alternately stacked. Thereafter, the plurality of polycrystalline or amorphous silicon films are turned into a single crystal by irradiating them with the energy beam.
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