Plasma-deposited capacitor dielectrics

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United States of America Patent

PATENT NO 4599678
SERIAL NO

06713638

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Abstract

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A plasma-deposited silicon compound thin film dielectric for use in a thin film capacitor. The film is produced in a high frequency glow discharge with a substrate heated to a temperature in excess of 50.degree. C. A thin film capacitor using such a film has a lower dissipation factor and a reduced tendency to age.

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Patent Owner(s)

Patent OwnerAddress
POLYPLASMA INCMONTREAL

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ramu, Tyamagondlu S No. 172, 2nd Main, 3rd Cross, "Srividya", Mahalaxmi Layout, Bangalore 560086, IN 1 25
Wertheimer, Michael R 91 Sommerville Ave., Westmount, Quebec, CA 7 156

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