Plasma-deposited capacitor dielectrics
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United States of America Patent
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-
Jul 8, 1986
Grant Date -
N/A
app pub date -
Mar 19, 1985
filing date -
Mar 19, 1985
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A plasma-deposited silicon compound thin film dielectric for use in a thin film capacitor. The film is produced in a high frequency glow discharge with a substrate heated to a temperature in excess of 50.degree. C. A thin film capacitor using such a film has a lower dissipation factor and a reduced tendency to age.
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