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Abstract

A method of manufacturing MIS capacitors for semiconductor IC devices, which have a three-ply dielectric layer formed of a first oxide film, a nitride film, and a second oxide film, thereby having high dielectric constants, stable electric characteristics, and high dielectric strength. First, the first oxide film is formed on a semiconductor substrate, on which film is then formed the nitride film, followed by thermal treatment of the nitride film in an oxiding atmosphere to form the thin second oxide film on the nitride film, to obtain the three-ply dielectric layer. The dielectric layer is further thermally treated in an inert gas atmosphere to eliminate a boundary level, etc. developed between the nitride film and the second oxide film at the time of formation of the second oxide film, for electrical stability of the dielectric layer.

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First Claim