Semiconductor optoelectro transducer
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United States of America Patent
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Aug 26, 1986
Grant Date -
N/A
app pub date -
Jul 29, 1983
filing date -
Nov 30, 1981
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The present invention has for its object to make a semiconductor optoelectro transducer higher-speed and higher-sensitivity. To this end, a field effect transistor, static induction transistor or static induction thyristor is used as a basic element and at least one portion of the gate region is exposed at the wafer surface.
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