Method of making three dimensional semiconductor devices in selectively laser regrown polysilicon or amorphous silicon layers
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United States of America Patent
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Sep 2, 1986
Issued Date -
N/A
app pub date -
Dec 19, 1983
filing date -
Nov 21, 1979
priority date (Note) -
Expired
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Abstract
Herein disclosed is a semiconductor device having at least one lower resistance region formed in the single-crystalline semiconductor film which is so formed to continuously coat both a single-crystalline semiconductor substrate and an insulating film formed on the surface of the substrate. Since the aforementioned single-crystalline semiconductor film is used, many advantages which are not attained from the semiconductor device according to the prior art can be obtained. The aforementioned single-crystalline semiconductor film is formed by irradiating a polycrystalline or amorphous semiconductor film with a laser beam.
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