Glass inlays for use in bonding semiconductor wafers
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United States of America Patent
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-
Sep 2, 1986
Issued Date -
N/A
app pub date -
Apr 30, 1985
filing date -
May 18, 1984
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A structure is provided, such as a capacitive transducer, utilizing two or more layers of semiconductor material wherein a highly insulating low capacitance bond is achieved by the invention herein between two adjacent layers by forming an inlay of glass in one layer and anodically bonding the other layer to the polished surface of the previously formed inlay.
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