Maskless growth of patterned films
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United States of America Patent
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-
Oct 7, 1986
Issued Date -
N/A
app pub date -
Apr 1, 1985
filing date -
Jun 1, 1982
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of growing patterned films on a substrate in a deposition chamber without masking, the method consisting of the following steps: pressurizing the chamber with a fluid medium to form a thin absorption layer on the substrate; evacuating the chamber to remove excess fluid medium; prenucleating portions of the substrate with a focused energy beam; repressurizing the chamber with a fluid medium; and inducing deposition of material from the fluid medium and thereby growing a patterned film with deposition occuring primarily on the prenucleated portions of the substrate.
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