P-I-N and avalanche photodiodes
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United States of America Patent
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Oct 7, 1986
Grant Date -
N/A
app pub date -
Nov 10, 1983
filing date -
Nov 10, 1983
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
High-speed p-i-n and avalanche photodetectors (photodiodes) use a heavily doped buried layer to greatly limit minority carriers generated by incident light in the buried layers and the substrates of the devices from reaching the cathodes and thus enhances response time while substantially decreasing dark current. A p-i-n diode of this type with a 1.1 square millimeter active area can operate with 4 volt reverse bias and is capable of having edge rise and fall times in the 4 nanosecond range.
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