CMOS .DELTA.V.sub.BE bias current generator

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United States of America Patent

PATENT NO 4618816
SERIAL NO

06768274

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In a CMOS structure a pair of BJTs are provided with lateral collectors and operated at different current densities. The lateral collectors are coupled to a current mirror load which provides a single ended output node. The pair bases are coupled together and to the current mirror load input so that the lateral BJT collectors operate at low potential. A current source supplies tail current and a resistor is coupled in series with the low current density BJT. The single ended output node is coupled to a current mirror that determines the BJT tail current. The circuit therefore has a negative feedback loop around the BJTs that will stabilize operation so that .DELTA.V.sub.BE appears across the resistor. The resistor can be chosen so that the overall circuit temperature coefficient can be established at a desired value.

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Patent Owner(s)

  • NATIONAL SEMICONDUCTOR CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Monticelli, Dennis M Fremont, CA 18 259

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