Method for detecting endpoint of development
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 4, 1986
Grant Date -
N/A
app pub date -
Jul 8, 1985
filing date -
Jul 9, 1984
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for detecting an endpoint of development including the steps of; forming a resist layer on a conductive layer formed on a substrate; exposing the resist layer by using light, X-rays, or electron beams; forming one electrode by connecting a connector consisting of a first conductive material to the conductive layer through the exposed resist layer on the substrate; forming another electrode by dipping an assembly consisting of a second conductive material into a developing solution; and developing the exposed resist layer while monitoring the current flowing between two electrodes.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully