Formation of a multi-layer glass-metallized structure formed on and interconnected to multi-layered-metallized ceramic substrate
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United States of America Patent
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Nov 11, 1986
Issued Date -
N/A
app pub date -
Mar 25, 1986
filing date -
Jun 22, 1984
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In the fabrication of an interconnection package for a plurality of semiconductors or integrated circuit chips wherein a multi-layered glass or glass-ceramic superstructure with a multi-layered distribution of planar conductors is formed by a process forming vertical conductive interconnection or studs between planar conductor layers, by pre-forming a via configuration in each glass or glass-ceramic layer at the interconnection points followed by depositing the conductive studs therein. The via configuration is formed by defining a desired pattern of vias, and ablating the vias through the top of and through the glass or glass-ceramic layer, using an ultraviolet laser. The vias may be stepped-shoulder or counter-bored by using a two mask operation.
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