In the fabrication of an interconnection package for a plurality of semiconductors or integrated circuit chips wherein a multi-layered glass or glass-ceramic superstructure with a multi-layered distribution of planar conductors is formed by a process forming vertical conductive interconnection or studs between planar conductor layers, by pre-forming a via configuration in each glass or glass-ceramic layer at the interconnection points followed by depositing the conductive studs therein. The via configuration is formed by defining a desired pattern of vias, and ablating the vias through the top of and through the glass or glass-ceramic layer, using an ultraviolet laser. The vias may be stepped-shoulder or counter-bored by using a two mask operation.
* 8,288,859 Semiconductor device packages including a semiconductor device and a redistribution element
* 2011/0266,696 SEMICONDUCTOR DEVICE PACKAGES INCLUDING A SEMICONDUCTOR DEVICE AND A REDISTRIBUTION ELEMENT
8,486,825 Methods of forming semiconductor device packages including a semiconductor device and a redistribution element, methods of forming redistribution elements and methods for packaging semiconductor devices
8,749,050 Redistribution elements and semiconductor device packages including semiconductor devices and redistribution elements
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