Importance

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Abstract

A photoelectric conversion device in which a plurality n (n being an integer large than one) of semiconductor elements U.sub.1 to U.sub.n are sequentially formed on a substrate in a side-by-side relation and connected in series one after another. The substrate is formed by an insulating sheet-like member having an insulating film formed on a flexible metallic sheet-like member. The element U.sub.i (i=1, 2, . . . n) has a first electrode E.sub.i, a non-single-crystal semiconductor laminate member Q.sub.i formed on the first electrode E.sub.i and having formed therein at least one PN or PIN junction, and a second electrode F.sub.i formed on the semiconductor laminate member Q.sub.i. The element U.sub.i is formed by the following process (a) a first conductive layer which will ultimately serve as the first electrode E.sub.i is formed on the substrate and then subjected to a first laser beam scanning, (b) a non-single-crystal semiconductor laminate member which will ultimately serve as the semiconductor laminate member Q.sub.i is formed to cover the first electrode E.sub.i and then subjected to a second laser beam scanning, (c) a second conductive layer which will ultimately serve as a second electrode F.sub.i is formed on the semiconductor laminate member Q.sub.i and then subjected to a third laser beam scanning.

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First Claim