Process for producing thin-film transistor
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United States of America Patent
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Nov 25, 1986
Issued Date -
N/A
app pub date -
Jun 10, 1985
filing date -
Aug 21, 1984
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A gate insulating film, a high-resistivity semiconductor film, a low-resistivity semiconductor film and if necessary a conducting film are successively deposited in lamination without exposing them to any oxidizing atmosphere including atmospheric air, and then the source and drain electrodes are selectively formed.
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