Sputter etching apparatus having a second electrically floating electrode and magnet means
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United States of America Patent
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Nov 25, 1986
Grant Date -
N/A
app pub date -
Feb 20, 1985
filing date -
Jan 7, 1985
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Sputter etching apparatus which includes a sputter etching electrode for mounting a substrate in a vacuum treatment chamber and another electrode oppositely facing the sputter etching electrode. The other electrode is in an electrically floating condition; that is, it is electrically insulated from contact with the chamber structure and from direct connection with the power source. Plasma generated is confined between the two electrodes. An annular magnetic field can be generated surrounding the space confining the plasma to further concentrate it.
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