GaAs FET oscillator noise reduction circuit
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United States of America Patent
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-
Dec 2, 1986
Grant Date -
N/A
app pub date -
Dec 24, 1984
filing date -
Dec 24, 1984
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method and means for reducing noise in a GaAs FET oscillator circuit is described. The circuit of the present invention achieves low noise oscillator operation by driving the gate input of the GaAs FET oscillator circuit with a source of voltage which exhibits a low impedance at baseband frequencies and driving the drain input with a source of current which exhibits a high impedance at said frequencies. The present invention further operates to control the D.C. voltage present on the drain terminal of the GaAs FET device regardless of the drain current, while simultaneously maintaining a constant D.C. drain current at some predetermined value which corresponds to optimum low-noise operation.
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