US Patent No: 4,628,174

Number of patents in Portfolio can not be more than 2000

Forming electrical conductors in long microdiameter holes

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Abstract

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A conductor is provided through a narrow bore hole of a wafer. The hole has a length-to-diameter ratio in excess of six. The conductor is formed by condensation of metal vapor generated at the bottom of said hole by a spark. The spark is generated between a vaporizable metal at the bottom of the hole and a thin electrode disposed above the hole from a conventional automobile coil and battery operating through a mercury switch.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
GENERAL ELECTRIC COMPANYSCHENECTADY, NY30546
INTERSIL CORPORATIONPALM BAY, FL1086

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Anthony, Thomas R Schenectady, NY 82 1601

Cited Art Landscape

Patent Info (Count) # Cites Year
 
VAPOR TECHNOLOGIES, INC. (1)
4,505,948 Method of coating ceramics and quartz crucibles with material electrically transformed into a vapor phase 13 1984

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
INVENSAS CORPORATION (9)
6,184,060 Integrated circuits and methods for their fabrication 226 1998
6,322,903 Package of integrated circuits and vertical integration 282 1999
6,639,303 Integrated circuits and methods for their fabrication 135 1999
6,420,209 Integrated circuits and methods for their fabrication 24 2000
6,717,254 Devices having substrates with opening passing through the substrates and conductors in the openings, and methods of manufacture 40 2001
6,498,074 Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners 48 2001
6,882,030 Integrated circuit structures with a conductor formed in a through hole in a semiconductor substrate and protruding from a surface of the substrate 149 2002
6,740,582 Integrated circuits and methods for their fabrication 147 2002
6,753,205 Method for manufacturing a structure comprising a substrate with a cavity and a semiconductor integrated circuit bonded to a contact pad located in the cavity 41 2003
 
INTEL CORPORATION (3)
6,908,845 Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme 13 2002
6,848,177 Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme 45 2002
7,112,887 Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme 5 2004
 
ELECTRO SCIENTIFIC INDUSTRIES, INC. (1)
5,614,114 Laser system and method for plating vias 141 1994
 
GM GLOBAL TECHNOLOGY OPERATIONS LLC (1)
6,159,831 Process to prepare an array of wires with submicron diameters 12 1998
 
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (1)
7,804,175 Semiconductor structures including conductive vias continuously extending therethrough and methods of making the same 0 2007
 
Thermo Electron Technologies Corp. (1)
5,194,128 Method for manufacturing ultrafine particles 23 1991
 
THERMO ELECTRON TECHNOLOGIES, WALTHAM, MA, A CORP OF CA (1)
5,062,936 Method and apparatus for manufacturing ultrafine particles 28 1989
 
Tri-Si Technologies, Inc. (1)
6,664,129 Integrated circuits and methods for their fabrication 160 2002
 
TRU-SI TECHNOLOGIES, INC. (1)
6,787,916 Structures having a substrate with a cavity and having an integrated circuit bonded to a contact pad located in the cavity 87 2001

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