Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon
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United States of America Patent
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Dec 16, 1986
Grant Date -
N/A
app pub date -
Oct 31, 1984
filing date -
Oct 31, 1984
priority date (Note) -
Expired
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Abstract
Full oxide isolation of epitaxial islands can be accomplished by oxidizing suitably porous silicon. The porous silicon can be created by anodizing highly doped n+ silicon in hydroflouric acid. Lesser doped epitaxial regions will not become porous and will become isolated islands suitable for the fabrication of semiconductor devices.
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