High density IC module assembly
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United States of America Patent
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-
Dec 16, 1986
Grant Date -
N/A
app pub date -
May 30, 1984
filing date -
May 30, 1984
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An electronic module having a high density of silicon IC chips is provided by mounting the chips in tapered through-holes in a silicon substrate, filling the edge gaps between the chips and the substrate with a glass so that the chips, the filler glass, and the substrate have a smooth upper surface adapted to receive monolithic interconnections formed by planar metallization methods. The resulting assembly is enclosed in a housing also formed substantially from silicon, which contains electrically isolated pins for contacting the input-output electrodes of the assembly. Preferential etching is used to form the through-holes in the substrate as well as various alignment means on the substrate and other parts of the housing so that they are self-aligning during assembly. Improved performance, reliability, and low cost is obtained.
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