Thin film capacitors and method of making the same

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United States of America Patent

PATENT NO 4631633
SERIAL NO

06812158

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Abstract

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A thin film capacitor is formed of a thin crystalline electrically insulative or semiconductive substrate. With the insulative substrate a thin conductive metal layer is deposited on the substrate and a thin film of a crystalline strontium barium niobate deposited on the thin conductive metal layer so that its 2.77.ANG. spaced atomic planes are oriented in a non-perpendicular manner to the substrate and an additional thin conductive layer is deposited on the surface of the strontium barium niobate film. When a semiconductive substrate is employed the strontium barium niobate film is deposited directly on the substrate. These capacitors exhibit a low temperature coefficient of capacitance and a high capacitance density.

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Patent Owner(s)

Patent OwnerAddress
NORTH AMERICAN PHILIPS CORPORATION A CORP OF DE100 EAST 42ND STREET NEW YORK NY 10017

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Frommer, Myron H Monsey, NY 4 76
Lukasik, Stanley J Hawthorn, NY 1 14
Shaulov, Avner A Monsey, NY 6 65
Zwicker, Walter K Scarborough, NY 5 53

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