Method for the indirect deposition of amorphous silicon and polycrystalline silicone and alloys thereof
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United States of America Patent
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Jan 6, 1987
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N/A
app pub date -
Jul 16, 1985
filing date -
May 23, 1984
priority date (Note) -
Expired
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Abstract
This invention relates to a method and apparatus for depositing films of amorphous and polycrystalline silicon and alloys thereof, by thermally decomposing a silicon bearing gas or gases and depositing the film onto a temperatured controlled substrate. The area of the heated surface is less than the area of the substrate. The substrate moves relative to independent of and outside of the heated surface.
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