Method of forming bipolar transistors with graft base regions
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United States of America Patent
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Feb 3, 1987
Grant Date -
N/A
app pub date -
Jun 5, 1985
filing date -
Jun 6, 1984
priority date (Note) -
Expired
status (Latency Note)
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Abstract
After an end part of a polycrystalline silicon film has been oxidized from an exposed side surface thereof, a silicon dioxide film formed is removed, and an opening thus provided is used for diffusing an impurity into a semiconductor substrate so as to form a graft base region. This measure is effective for fabricating a semiconductor device of small required area at high precision.
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