Semiconductor optoelectro transducer
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United States of America Patent
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-
Feb 3, 1987
Grant Date -
N/A
app pub date -
Jul 29, 1983
filing date -
Dec 1, 1981
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor optoelectro transducer is highly sensitive in infrared to far infrared regions and is operable at high speed. To this end, the optoelectro transducer is formed by a static induction transistor or a static induction thyristor and an element which are excited by light of longer wavelength than that of light corresponding to the energy of the energy gap of a channel region, is added to the channel region which receives light.
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