Piezoelectric resonating device
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United States of America Patent
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Feb 10, 1987
Grant Date -
N/A
app pub date -
Mar 8, 1985
filing date -
Mar 9, 1984
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention provides a piezoelectric thin-film resonator comprising a non-piezoelectric film layer formed on a substrate, a lower electrode, a piezoelectric film layer and an upper electrode. An air-gap layer is formed between the non-piezoelectric film and the substrate to facilitate vibration of the piezoelectric film layer at the resonate frequency. The resulting resonating device is mechanically strong while at the same time being capable of operating at high frequency.
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