I.sup.2 L heterostructure bipolar transistors and method of making the same
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United States of America Patent
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Feb 17, 1987
Grant Date -
N/A
app pub date -
Apr 8, 1985
filing date -
Apr 8, 1985
priority date (Note) -
Expired
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Abstract
An integrated injection logic (I.sup.2 L) semiconductor structure is disclosed which may be advantageously implemented in a group III-V compound semiconductor such as gallium arsenide. The base region of the lateral transistor is made extremely thin (less than one-tenth micron) by use of 'regrowth' techniques. The structure of the vertical transistor is simplified by using a Schottky collector.
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