Method of producing MOS FET type semiconductor device
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United States of America Patent
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Mar 3, 1987
Issued Date -
N/A
app pub date -
Apr 8, 1985
filing date -
Feb 16, 1981
priority date (Note) -
Expired
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Abstract
In the production of an MOS transistor or a one-MOS transistor one-capacitor memory cell, a gate electrode is made of aluminum, doped regions are formed by an ion-implantation method using the gate electrode as a mask, and the doped regions are annealed by a laser beam.
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