PIN diode switched RF signal attenuator
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United States of America Patent
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-
Mar 31, 1987
Grant Date -
N/A
app pub date -
Jul 23, 1985
filing date -
Jul 23, 1985
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A multi-path, ladder-type variable step RF signal attenuator is provided. The ladder network is comprised of a number of asymmetric power splitting elements and PI-pad resistor attenuator elements. The high-speed switching and long life characteristics of PIN diodes are utilized to switch resistive attenuator elements into or out of the ladder network to provide selectable values of signal attenuation.
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