Static induction thyristor with stepped-doping gate region
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United States of America Patent
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-
Mar 31, 1987
Grant Date -
N/A
app pub date -
Oct 1, 1984
filing date -
Oct 5, 1983
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A static induction thyristor having buried gate region having the concentration distribution of the impurity to have at least one stepwise variation viewed from the surface of the gate for improving dv/dt capability and for allowing more tolerance in the accuracy in the over-etching and also for keeping variation of the gate resistance small. A static induction thyristor having buried gate region and having the high concentration layer given selective junction depth and to make shallow for the location situated above or below the gate region and may be provided with insulating layer between anode or cathode electrode for further improving dv/dt capability and also the gate loss at turn-on in high frequency operation and for improving manufacturing yield.
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