Method for the manufacture of thin film transistors
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United States of America Patent
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Apr 7, 1987
Issued Date -
N/A
app pub date -
Apr 17, 1986
filing date -
Jul 15, 1981
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A thin film transistor comprises an insulating substrate, a semiconductor layer on the substrate, an electrically insulating oxide layer overlaying the semiconductor layer, and an electroconductive layer overlaying the oxide layer. The oxide layer is formed by oxidizing a portion of the semiconductor through a patterned opening in a photo resist. A method for the manufacture of the same is also disclosed.
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