Pattern exposure apparatus with distance measuring system
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United States of America Patent
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Apr 21, 1987
Grant Date -
N/A
app pub date -
Apr 11, 1985
filing date -
Apr 17, 1984
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An exposure apparatus wherein a semiconductor wafer is exposed to an IC circuit pattern formed on a mask through a reduction projection optical system, and then the wafer is stepped; and these operations are alternately repeated, thereby forming a plurality of patterns on the wafer. A distance measuring system utilizing the interference between laser beams, has a first mirror fixed relative to the mask and another mirror fixed relative to the wafer, so that the relative position between the mask and the wafer is determined by a single interferometer system.
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