Process for producing monocrystalline layer on insulator
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United States of America Patent
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Apr 21, 1987
Issued Date -
N/A
app pub date -
Mar 22, 1984
filing date -
Mar 31, 1983
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A process for producing a monocrystalline layer on an insulator, particularly in a semiconductor wafer adapted for use to produce large-scale integrated circuits, comprising the steps of providing a nonmonocrystalline layer on an insulator and heating a region of the nonmonocrystalline layer by irradiating it from two heat sources while moving the heat sources relative to the nomonocrystalline layer, thereby locally melting and transforming the nonmonocrystalline layer to a monocrystalline layer.
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