Plasma etching of refractory metals and their silicides
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United States of America Patent
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Apr 21, 1987
Grant Date -
N/A
app pub date -
May 3, 1985
filing date -
May 3, 1985
priority date (Note) -
Expired
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Abstract
Refractory metals, refractory metal silicide, and polysilicon/refractory metal silicide sandwich structures integrated circuits are etched using carbonyl chemistry. That is, the deposited material is plasma etched using an etchant gas mixture which contains a gas, such as CO2, which can dissociate to provide carbonyl groups (CO) or, in combination with halogen sources, carbonyl halide radicals.
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