Importance

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Abstract

An insulated gate transistor including a semiconductor substrate, high impurity source and drain regions formed above a channel region of low conductivity, a high impurity concentration region having a conductivity type opposite to that of the source region, a gate insulating layer extending into the channel region farther inwardly of the substrate than the source region, and a gate electrode positioned on the gate insulating layer. The gate electrode is made of a material having a high potential barrier with respect to the source region. The insulated gate transistor may be used as a driver transistor in an integrated circuit, as a switching transistor in a dynamic RAM memory cell, static RAM memory cell and in a complementary configuration.

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First Claim