Photomask and method of fabrication thereof
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United States of America Patent
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-
Jun 2, 1987
Grant Date -
N/A
app pub date -
Oct 25, 1985
filing date -
Oct 29, 1984
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A photolithographic mask for use in the fabrication of semiconductor integrated circuit devices, comprising a transparent substrate having a major surface, and a metallic film formed on the major surface of the transparent substrate and impermeable to ultraviolet rays having wavelengths within a predetermined range, wherein the metallic film is doped with sulfur ions to provide a reduced angle of contact between the surface of the film and a body of pure water to achieve an increased degree of adaptability of the photomask to cleaning with pure water when the photomask is put to repeated use over a prolonged period of time.
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