Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique
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United States of America Patent
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Jun 9, 1987
Grant Date -
N/A
app pub date -
Oct 28, 1985
filing date -
Oct 28, 1985
priority date (Note) -
Expired
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Abstract
A chemical-mechanical (chem-mech) method for removing SiO.sub.2 protuberances at the surface of a silicon chip, such protuberances including 'bird's heads'. A thin etch stop layer of Si.sub.3 N.sub.4 is deposited onto the wafer surface, which is then chem-mech polished with a SiO.sub.2 water based slurry. The Si.sub.3 N.sub.4 acts as a polishing or etch stop barrier layer only on the planar portions of the wafer surface. The portions of the Si.sub.3 N.sub.4 layer located on the top and at the sidewalls of the 'bird's heads' and the underlying SiO.sub.2 protuberances are removed to provide a substantially planar integrated structure.
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