Metal gate, interconnect and contact system for VLSI devices
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United States of America Patent
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Jun 9, 1987
Grant Date -
N/A
app pub date -
Jun 25, 1984
filing date -
Jun 25, 1984
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A metal gate and contact/interconnect system for MOS VLSI devices employs a multiple-level refractory metal structure including a thin layer of molybdenum for adhesion to oxide and a thicker layer of tungsten over the molybdenum. The metal gate is encapsulated in oxide during a self-aligned siliciding operation. A contact to the silicide-clad source/drain region includes a thin tungsten layer, then the molybdenum/tungstem stack, and a top layer of gold.
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