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Abstract

The invention is a radiation dosimeter and method of operation of its elements comprising a pair of silicon insulated gate field effect transistors integrated into the same substrate, each having a gate, a source and a drain. The dosimeter includes apparatus for measuring a first differential threshold votlage between the transistors, appartus for forward biasing the gate of the first transistor and inhibiting operation of the second, while allowing both to be subjected to ionizing radiation, and apparatus for measuring a second differential threshold voltage between the transistors following the irradiation. The first differential threshold voltage can be subtracted from the second to obtain a measure of the radiation dosage. Threshold drift and offset is thereby substantially eliminated.

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First Claim