Device fabrication method using spin-on glass resins
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United States of America Patent
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Jul 28, 1987
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N/A
app pub date -
Feb 4, 1985
filing date -
Feb 4, 1985
priority date (Note) -
Expired
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Abstract
A new method for fabricating a device, such as a semiconductor device, is disclosed. The method includes the step of patterning a substrate with a trilevel resist containing a spin-deposited substitute for the conventional central, silicon dioxide region. This substitute includes an organosilicon glass resin in combination with metal-and-oxygen containing material. The inventive method prevents the losses of linewidth control, and avoids the pattern degradation due to undesirably many pinholes, of previous such methods.
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