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Abstract

A random access memory cell includes a volatile RAM cell, a non-volatile RAM cell and a transfer control circuit connected between the volatile and non-volatile elements. The volatile element includes two nodes and has two stable states. The non-volatile element also includes two nodes, each of which is connected to one of the nodes of the volatile element. The non-volatile element preferably includes a floating gate field effect transistor used as a storage transistor and connected between the two nodes of the non-volatile element to store a charge corresponding to the state of the non-volatile element. A second floating gate field effect transistor is coupled to the storage transistor to be used as a sense transistor. The transfer control circuit selectively connects the sense transistor to one of the nodes of the volatile element to cause the volatile element to adopt the state represented by the charge on the storage transistor of the non-volatile element. A pair of charge pumps in the non-volatile element supply the voltage to the nodes of the non-volatile element to properly program the storage transistor.

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First Claim