Three-dimensional CMOS using selective epitaxial growth
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United States of America Patent
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Aug 18, 1987
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N/A
app pub date -
Jan 2, 1986
filing date -
Jun 27, 1984
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Expired
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Abstract
A three-dimensional CMOS integrated circuit structure in which two complementary field effect transistors are fabricated in vertical alignment with one another, and in which both transistors are single crystal and share a common crystal lattice structure and form a single unitary crystalline structure.
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